This inventor holds 50 USPTO granted patents and 2 published patent applications, primarily in JFET Technology (CPC class H01L). Top assignees: Lovoltech, Incorporated, Qspeed Semiconductor Inc., Champion Microelectronic Corporation. Active years: 1995-2020.
Inventors with similar research interests:
Location History:
- Saratago, CA (US) (2005)
- Saratoga, CA (US) (1995 - 2020)
Company Filing History:
27 out of 36 
9 out of 15 
2 out of 35 
Years Active: 1995-2020
Areas of Expertise:
Title: **Ho-Yuan Yu: Pioneering Innovations in Semiconductor Technology**
Introduction
Ho-Yuan Yu is an accomplished inventor based in Saratoga, CA, with an impressive portfolio of 50 patents to his name. His work primarily focuses on enhancing semiconductor devices, particularly in the fields of rectifiers and MOSFET technology. His recent innovative patents are paving the way for advancements in high-speed and high breakdown voltage applications in the semiconductor industry.
Latest Patents
Among Ho-Yuan Yu's latest innovations are two significant patents: the “Deep trench MOS barrier junction all around rectifier” and a high-speed Schottky rectifier. The deep trench technology involves a Junction All Around structure that surrounds and encloses a P-N junction or a MOS structure, allowing for higher reverse bias voltage and reduced leakage current. In this design, multiple deep trenches in a ring shape enclose a vertical P-N junction, whereby a corresponding wider ring-shaped P+ region is created atop an N− epitaxial layer. Another embodiment described in the patent suggests an enclosed deep trench that surrounds a horizontal P-N junction, leading to superior performance as a planar N-channel MOS during forward bias.
The high-speed Schottky rectifier patent describes an apparatus and methods for a device that can support a high reverse bias voltage of up to 2,000 volts. This Schottky device consists of three layers of N-type semiconductor, including an enclosed deep trench structure designed to maintain the performance of the device under high voltage conditions.
Career Highlights
Ho-Yuan Yu has significantly contributed to the semiconductor field through his tenure at various reputable companies, including Lovoltech Incorporated and Qspeed Semiconductor Inc. His extensive experience has honed his expertise in semiconductor technology, leading him to develop cutting-edge solutions that address critical industry challenges.
Collaborations
Throughout his career, Ho-Yuan Yu has collaborated with notable professionals, including Valentino Liva and Jian Li. These partnerships highlight the importance of teamwork and knowledge-sharing in driving innovation within the competitive semiconductor landscape.
Conclusion
Ho-Yuan Yu continues to make remarkable contributions to the field of semiconductor technology through his innovative patents and collaborative efforts. His commitment to excellence facilitates advancements that may shape the future of electronic devices, emphasizing the vital role of inventors in driving progress and innovation in technology.