The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Sep. 03, 2016
Applicants:

Yutechnix, Inc., Saratoga, CA (US);

Champion Microelectronic Corp., Hsinchu, TW;

Inventors:

Ho-Yuan Yu, Saratoga, CA (US);

Haiping Dun, Fremont, CA (US);

Hung-Chen Lin, Hsinchu, TW;

Assignees:

Champion Microelectronic Corp., Hsinchu, TW;

Yutechnix, Inc., Saratoga, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8725 (2013.01); H01L 21/265 (2013.01); H01L 29/0688 (2013.01); H01L 29/0692 (2013.01); H01L 29/36 (2013.01); H01L 29/66143 (2013.01); H01L 29/47 (2013.01);
Abstract

Apparatus, methods and other embodiments associated with a high speed and high breakdown voltage Schottky rectifier are disclosed. In one embodiment, the Schottky rectifier has three layers of N-type semiconductor, a first layer of highly doped N-type substrate at the bottom, a second layer of lightly doped epitaxial N-type material above the first layer, and a third layer of very low doping concentration N-type material created by converting the top shallow portion of the second layer without turning into P-type. The Schottky device further includes an enclosed deep trench structure close to the bottom of the second layer and can sustain high reverse bias voltage up to 2,000 volt.


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