Company Filing History:
4 out of 32 
2 out of 54,750 
2 out of 2 Years Active: 1992-2022
Title: Haiping Dun: Innovator in MOSFET Technology
Introduction
Haiping Dun is a prominent inventor based in Fremont, CA, known for his significant contributions to the field of semiconductor technology. He holds a total of 6 patents, showcasing his innovative approach to high-speed and high breakdown voltage MOS rectifiers.
Latest Patents
Dun's latest patents include groundbreaking designs such as the Deep Trench Surrounded MOSFET with Planar MOS Gate. This invention involves an apparatus and various embodiments that enhance the performance of high-speed and high breakdown voltage MOS rectifiers. One notable embodiment features a Junction All Around structure, where a deep trench surrounds and encloses a P-N junction or a MOS structure. This design is applied in various rectifiers, with multiple deep trenches arranged in concentric ring circles enclosing several horizontal P-N junctions. Another embodiment presents an enclosed deep trench in a ring shape that surrounds a horizontal P-N junction, resulting in a planar N-channel MOS during forward bias. This innovative structure can be extended to include multiple deep trenches with associated horizontal P-N junctions. Additionally, Dun has developed a Double Trench MOSFET with Trench Gate, which also focuses on high-speed and high breakdown voltage MOS rectifiers. This design features a Junction All Around structure that surrounds a vertical MOS structure, complemented by a shallow trench gate at the center, creating a device with very high breakdown voltage and minimal leakage current.
Career Highlights
Throughout his career, Haiping Dun has worked with notable companies, including Champion Microelectronic Corporation and Intel Corporation. His experience in these leading organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Dun has collaborated with talented individuals in the field, including Hung-Chen Lin and Ho-Yuan Yu. These partnerships have further enriched his work and contributed to the advancement of MOSFET technology.
Conclusion
Haiping Dun's innovative contributions to the field of semiconductor technology, particularly in MOSFET design, have established him as a key figure in the industry. His patents reflect a commitment to enhancing the performance and efficiency of electronic devices.