Deep trench mos barrier junction all around rectifier and mosfet

Abstract

Apparatus and other embodiments associated with high speed and high breakdown voltage rectifier are disclosed. A Junction All Around structure, where a deep trench structure surrounds and encloses a P-N junction or a MOS structure, is created and applied in various rectifiers. In one embodiment, multiple deep trenches in ring shape enclosed a vertical P-N junction. For each deep trench, a corresponding wider ring-shape P+ region is created on top of a N− epi layer. This enclosed deep trench surrounding a vertical P-N junction and a thinner N− epitaxial layer allow higher reverse bias voltage and low leakage current. In another embodiment, an enclosed deep trench in ring shape surrounds a horizontal P-N junction, which results in a planar N-channel MOS during forward bias. The structure can be extended to multiple deep trenches with associated horizontal P-N junctions. In a further embodiment, an enclosed deep trench in ring shape surrounds a vertical MOS structure plus a shallow trench gate in the center to create yet another device with very high breakdown voltage and very low leakage current. This structure can be extended to multiple deep trenches and shallow trenches as well.