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Santa Clara, CA, United States of America

Qspeed Semiconductor Inc.

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USPTO Granted Patents = 15

% Expired Patents = 93.3

Trademarks = 1

Forward Citations = 212

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16 inventors (with patents filed for the assignee):

Ho-Yuan Yu (9 out of 50 patents)

Jian Li (4 out of 100 patents)

Eric Earl Johnson (2 out of 8 patents)

4. Richard Francis (2 out of 24 patents)

5. Valentino Liva (2 out of 15 patents)

6. Chong Ming Lin (2 out of 39 patents)

7. Yang Yu Fan (2 out of 2 patents)

8. Ho Yuan Yu (2 out of 5 patents)

9. Chong-Ming Lin (2 out of 2 patents)

10. Jonathan Klein (1 out of 13 patents)

11. Daniel Chang (1 out of 4 patents)

12. Harold L Massie (1 out of 3 patents)

13. Kuang Ming Daniel Chang (1 out of 1 patent)

14. Hy Hoang (1 out of 1 patent)

15. Morris Tsou (1 out of 1 patent)

15 patents: Sort by Forward Citations

1. 7746156 - Circuit and method for driving a junction field effect transistor (2010-06-29),

2. 7696598 - Ultrafast recovery diode (2010-04-13),

3. 7696540 - Structure and method for a fast recovery rectifier structure (2010-04-13),

4. 7655964 - Programmable junction field effect transistor and method for programming same (2010-02-02),

5. 7608888 - Field effect transistor (2009-10-27),

6. 7452763 - Method for a junction field effect transistor with reduced gate capacitance (2008-11-18),

7. 7417266 - MOSFET having a JFET embedded as a body diode (2008-08-26),

8. 7348826 - Composite field effect transistor (2008-03-25),

9. 7268378 - Structure for reduced gate capacitance in a JFET (2007-09-11),

10. 7265398 - Method and structure for composite trench fill (2007-09-04),

11. 7262461 - JFET and MESFET structures for low voltage, high current and high frequency applications (2007-08-28),

12. 7238976 - Schottky barrier rectifier and method of manufacturing the same (2007-07-03),

13. 7227242 - Structure and method for enhanced performance in semiconductor substrates (2007-06-05),

14. 7220661 - Method of manufacturing a Schottky barrier rectifier (2007-05-22),

15. 7211845 - Multiple doped channel in a multiple doped gate junction field effect transistor (2007-05-01),

Company Overview

Qspeed Semiconductor Inc. is a technology company based in Santa Clara, California, specializing in advanced semiconductor solutions. The organization focuses on developing high-performance semiconductor devices that cater to various applications, including telecommunications, automotive, and consumer electronics. With a commitment to innovation, Qspeed is dedicated to enhancing the efficiency and capabilities of electronic systems through cutting-edge research and development in semiconductor technology.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

15 Patents

#212 in Santa Clara, CA

#5,037 in California

#21,085 in US

#39,991 in the World

Santa Clara, CA, United States of America

Qspeed Semiconductor Inc.

Forward Citations = 212

16 inventors:

Ho-Yuan Yu (9 out of 50 patents)

Jian Li (4 out of 100 patents)

Eric Earl Johnson (2 out of 8 patents)

4. Richard Francis (2 out of 24 patents)

5. Valentino Liva (2 out of 15 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Qspeed Semiconductor Inc.. Retrieved from https://idiyas.com/company/qspeed-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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