For the Inventor, By the Inventor

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Santa Clara, CA, United States of America

Qspeed Semiconductor Inc.

USPTO Granted Patents = 15

Trademarks = 1

Forward Citations = 208

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16 inventors (with patents filed for the assignee):

Ho-Yuan Yu (9 out of 50 patents)

Jian Li (4 out of 83 patents)

Eric Earl Johnson (2 out of 8 patents)

4. Richard Francis (2 out of 24 patents)

5. Valentino Liva (2 out of 15 patents)

6. Chong Ming Lin (2 out of 39 patents)

7. Yang Yu Fan (2 out of 2 patents)

8. Ho Yuan Yu (2 out of 5 patents)

9. Chong-Ming Lin (2 out of 2 patents)

10. Jonathan Klein (1 out of 13 patents)

11. Daniel Chang (1 out of 4 patents)

12. Harold L Massie (1 out of 3 patents)

13. Kuang Ming Daniel Chang (1 out of 1 patent)

14. Hy Hoang (1 out of 1 patent)

15. Morris Tsou (1 out of 1 patent)

15 patents: Sort by Forward Citations

1. 7746156 - Circuit and method for driving a junction field effect transistor (2010-06-29),

2. 7696598 - Ultrafast recovery diode (2010-04-13),

3. 7696540 - Structure and method for a fast recovery rectifier structure (2010-04-13),

4. 7655964 - Programmable junction field effect transistor and method for programming same (2010-02-02),

5. 7608888 - Field effect transistor (2009-10-27),

6. 7452763 - Method for a junction field effect transistor with reduced gate capacitance (2008-11-18),

7. 7417266 - MOSFET having a JFET embedded as a body diode (2008-08-26),

8. 7348826 - Composite field effect transistor (2008-03-25),

9. 7268378 - Structure for reduced gate capacitance in a JFET (2007-09-11),

10. 7265398 - Method and structure for composite trench fill (2007-09-04),

11. 7262461 - JFET and MESFET structures for low voltage, high current and high frequency applications (2007-08-28),

12. 7238976 - Schottky barrier rectifier and method of manufacturing the same (2007-07-03),

13. 7227242 - Structure and method for enhanced performance in semiconductor substrates (2007-06-05),

14. 7220661 - Method of manufacturing a Schottky barrier rectifier (2007-05-22),

15. 7211845 - Multiple doped channel in a multiple doped gate junction field effect transistor (2007-05-01),

QSpeed Semiconductor Inc. is a leading provider of high-performance semiconductor products for various industries. With a focus on innovation and cutting-edge technology, QSpeed Semiconductor Inc. delivers solutions that enable customers to achieve superior performance and efficiency. Through our dedication to quality and customer satisfaction, we strive to exceed expectations and drive growth in the semiconductor industry.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

15 Patents

#250 in Santa Clara, CA

#4,865 in California

#20,400 in US

#38,669 in the World

Santa Clara, CA, United States of America

Qspeed Semiconductor Inc.

Forward Citations = 208

16 inventors:

Ho-Yuan Yu (9 out of 50 patents)

Jian Li (4 out of 83 patents)

Eric Earl Johnson (2 out of 8 patents)

4. Richard Francis (2 out of 24 patents)

5. Valentino Liva (2 out of 15 patents)

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