The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2010
Filed:
Dec. 27, 2005
Richard Francis, Los Gatos, CA (US);
Jian LI, Sunnyvale, CA (US);
Yang Yu Fan, Sunnyvale, CA (US);
Eric Johnson, Santa Clara, CA (US);
Richard Francis, Los Gatos, CA (US);
Jian Li, Sunnyvale, CA (US);
Yang Yu Fan, Sunnyvale, CA (US);
Eric Johnson, Santa Clara, CA (US);
QSpeed Semiconductor Inc., Santa Clara, CA (US);
Abstract
An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of wells, separated from one another, formed in the lightly doped layer, comprising doping of a second polarity. The plurality of wells connect to the metallization layer. The ultrafast recovery diode further includes a plurality of regions, located between wells of said plurality of wells, more highly doped of the first polarity than the lightly doped layer.