The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2007
Filed:
Apr. 02, 2004
Applicant:
Ho-yuan Yu, Saratoga, CA (US);
Inventor:
Ho-Yuan Yu, Saratoga, CA (US);
Assignee:
Qspeed Semiconductor Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon, a trench is etched. Deposition and etch processes using a combination of oxide and polysilicon are used to fabricate a composite trench fill. The trench bottom and a lower portion of the walls are covered with oxide. The remaining portion of the trench volume is filled with polysilicon. The method may be used for junction field effect transistors (JFETs) and metal oxide semiconductor field effect transistors (MOSFETs).