The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Mar. 16, 2006
Applicants:
Jonathan Klein, Palo Alto, CA (US);
Morris Tsou, San Jose, CA (US);
Inventors:
Jonathan Klein, Palo Alto, CA (US);
Morris Tsou, San Jose, CA (US);
Assignee:
QSpeed Semiconductor Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
Abstract
A composite field effect transistor, in accordance with one embodiment, includes a zener diode, a junction field effect transistor and a metal-oxide-semiconductor field effect transistor. A gate of the junction field effect transistor is coupled to an anode of the zener diode. A cathode of the zener diode is coupled to a gate of the metal-oxide-semiconductor field effect transistor. A drain of the metal-oxide-semiconductor field effect transistor is coupled to a source of the junction field effect transistor.