The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Mar. 21, 2005
Chong Ming Lin, Sunnyvale, CA (US);
Ho Yuan Yu, Saratoga, CA (US);
Chong Ming Lin, Sunnyvale, CA (US);
Ho Yuan Yu, Saratoga, CA (US);
Qspeed Semiconductor Inc., Santa Clara, CA (US);
Abstract
A programmable junction field effect transistor (JFET) with multiple independent gate inputs. A drain, source and a plurality of gate regions for controlling a conductive channel between the source and drain are fabricated in a semiconductor substrate. A first portion the gate regions are coupled to a first gate input and a second portion of the gate regions are coupled to a second gate input. The first and second gate inputs are electrically isolated from each other. The JFET may be programmed by applying a programming voltage to the first gate input and operated by applying a signal to the second gate input.