The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Jun. 10, 2005
Jian LI, Sunnyvale, CA (US);
Ho-yuan Yu, Saratoga, CA (US);
Jian Li, Sunnyvale, CA (US);
Ho-Yuan Yu, Saratoga, CA (US);
Qspeed Semiconductor Inc., Santa Clara, CA (US);
Abstract
A field effect transistor (FET), in accordance with one embodiment, includes a first semiconductor layer, a first dielectric layer, a second semiconductor layer, a second dielectric layer and a third semiconductor layer. The first dielectric layer may be disposed upon the first semiconductor layer, wherein the first semiconductor layer has a first conductivity type. The second semiconductor layer, having a second conductivity type, may be disposed upon the first dielectric layer. The second dielectric layer may be disposed upon the second semiconductor layer. The third semiconductor layer, having a first conductivity type, may be disposed upon the first semiconductor layer between a first and second portion of the first dielectric layer, a first and second portion of the second semiconductor layer and a first and second portion of the second dielectric layer. The FET may also include a third dielectric layer disposed between the third semiconductor layer and the first and second portions of the second semiconductor layer.