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Hirofumi Watatani

USPTO Granted Patents = 28 (Patent Applications = 2)

Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 202(Granted Patents)

Location History:

Suzuka, JP (2003 - 2005)
Kawasaki, JP (1997 - 2013)
Shinjuku, JP (2014)
Tokyo, JP (2015)

Company Filing History:

Fujitsu Semiconductor Limited

patents

2 out of 467

Fujitsu Microelectronics Limited

where one patent can have more than one assignee

Years Active: 1997-2015

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28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9123728 - Semiconductor device and method for manufacturing semiconductor device (2015-09-01),

2. 8669177 - Semiconductor device and method for manufacturing semiconductor device (2014-03-11),

3. 8604552 - Semiconductor device and method for fabricating semiconductor device (2013-12-10),

4. 8536708 - Method of manufacturing a semiconductor device and semiconductor device (2013-09-17),

5. 8349722 - Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device (2013-01-08),

6. 8338953 - Method of manufacturing a semiconductor device and semiconductor device (2012-12-25),

7. 8105935 - Method of manufacturing a semiconductor device (2012-01-31),

8. 8030207 - Method of manufacturing a semiconductor device and semiconductor device (2011-10-04),

9. 7951686 - Method of manufacturing semiconductor device having device characteristics improved by straining surface of active region (2011-05-31),

10. 7749897 - Method of manufacturing semiconductor device (2010-07-06),

11. 7701016 - Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method (2010-04-20),

12. 7642185 - Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device (2010-01-05),

13. 7541296 - Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device (2009-06-02),

14. 7485570 - Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device (2009-02-03),

15. 7208405 - Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device (2007-04-24),

Title: Hirofumi Watatani: Pioneering Inventor from Kawasaki

Introduction: Hirofumi Watatani is a renowned inventor hailing from Kawasaki, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Watatani holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Watatani has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs in various industries.

Collaborations: Throughout his career, Watatani has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange that has been instrumental in his success as an inventor.

Conclusion: Hirofumi Watatani's relentless pursuit of innovation and his passion for creating technology that makes a difference have solidified his position as a trailblazing inventor not only in Kawasaki but on a global scale.

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