The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jan. 22, 2014
Applicant:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Inventors:
Takahiro Kono, Tokyo, JP;
Shinichi Akiyama, Tokyo, JP;
Hirofumi Watatani, Tokyo, JP;
Tamotsu Owada, Yokohama, JP;
Assignee:
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76835 (2013.01); H01L 21/76844 (2013.01); H01L 21/76849 (2013.01); H01L 21/76856 (2013.01); H01L 21/76862 (2013.01); H01L 21/76867 (2013.01); H01L 23/53295 (2013.01); H01L 2221/1036 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor.