The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

Sep. 06, 2012
Applicants:

Shinichi Akiyama, Kawasaki, JP;

Kazuo Kawamura, Musashino, JP;

Hisaya Sakai, Kawasaki, JP;

Hirofumi Watatani, Kawasaki, JP;

Kazuya Okubo, Kawasaki, JP;

Inventors:

Shinichi Akiyama, Kawasaki, JP;

Kazuo Kawamura, Musashino, JP;

Hisaya Sakai, Kawasaki, JP;

Hirofumi Watatani, Kawasaki, JP;

Kazuya Okubo, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.


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