The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Mar. 15, 2007
Tamotsu Owada, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Ken Sugimoto, Kawasaki, JP;
Shun-ichi Fukuyama, Kawasaki, JP;
Tamotsu Owada, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Ken Sugimoto, Kawasaki, JP;
Shun-ichi Fukuyama, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.