The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2010

Filed:

Oct. 03, 2006
Applicants:

Sadahiro Kishii, Kawasaki, JP;

Hirofumi Watatani, Kawasaki, JP;

Masanori Terahara, Kawasaki, JP;

Ryo Tanabe, Kawasaki, JP;

Kaina Suzuki, Kawasaki, JP;

Shigeo Satoh, Kawasaki, JP;

Inventors:

Sadahiro Kishii, Kawasaki, JP;

Hirofumi Watatani, Kawasaki, JP;

Masanori Terahara, Kawasaki, JP;

Ryo Tanabe, Kawasaki, JP;

Kaina Suzuki, Kawasaki, JP;

Shigeo Satoh, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A trench is formed in the surface layer of a semiconductor substrate, surrounding an active region. A lower insulating film made of insulating material fills a lower region of the trench. An upper insulating film fills a region of the trench above the lower insulating film. The upper insulating film has therein a stress generating tensile strain in a surface layer of the active region.


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