The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Jul. 01, 2005
Tamotsu Owada, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Yoshihiro Nakata, Kawasaki, JP;
Shirou Ozaki, Kawasaki, JP;
Shun-ichi Fukuyama, Kawasaki, JP;
Tamotsu Owada, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Yoshihiro Nakata, Kawasaki, JP;
Shirou Ozaki, Kawasaki, JP;
Shun-ichi Fukuyama, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.