The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jul. 18, 2008
Ken Sugimoto, Kawasaki, JP;
Yoshiyuki Ohkura, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Tamotsu Owada, Kawasaki, JP;
Shunn-ichi Fukuyama, Kawasaki, JP;
Ken Sugimoto, Kawasaki, JP;
Yoshiyuki Ohkura, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Tamotsu Owada, Kawasaki, JP;
Shunn-ichi Fukuyama, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiHgas and COgas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.