The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Feb. 18, 2010
Sadahiro Kishii, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Masanori Terahara, Kawasaki, JP;
Ryo Tanabe, Kawasaki, JP;
Kaina Suzuki, Kawasaki, JP;
Shigeo Satoh, Kawasaki, JP;
Sadahiro Kishii, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Masanori Terahara, Kawasaki, JP;
Ryo Tanabe, Kawasaki, JP;
Kaina Suzuki, Kawasaki, JP;
Shigeo Satoh, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A trench is formed in a surface layer of a semiconductor substrate, the trench surrounding an active region. A lower insulating film made of insulating material is deposited over the semiconductor device, the lower insulating film filling a lower region of the trench and leaving an empty space in an upper region. An upper insulating film made of insulating material having therein a tensile stress is deposited on the lower insulating film, the upper insulating film filling the empty space left in the upper space. The upper insulating film and the lower insulating film deposited over the semiconductor substrate other than in the trench are removed.