The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Sep. 28, 2009
Tamotsu Owada, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Tamotsu Owada, Kawasaki, JP;
Hirofumi Watatani, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method for fabricating a semiconductor device, comprising: forming n-channel field-effect transistors on a silicon substrate; forming a first insulating film covering the field-effect transistors; shrinking the first insulating film; forming a second insulating film over the first insulating film; and shrinking the second insulating film, wherein the forming an insulating film covering the field-effect transistors and the shrinking the insulating film are repeated a plurality of time.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile