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For the Inventor, By the Inventor

Miyagi, Japan

Hidenori Akiyama

This inventor holds 22 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Insulated Gate Devices. Top assignees: Pakal Technologies, LLC, Fujifilm Corporation, Other. Active years: 2003-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidenori Akiyama. Retrieved from https://idiyas.com/inventor/hidenori-akiyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 100.0


Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 31(Granted Patents)


Location History:

  • Miyagi Sendai, JP (2013 - 2014)
  • Miyagi, JP (2003 - 2022)

Company Filing History:

goldMedal20 out of 32 
 
Pakal Technologies, LLC
 patents
silverMedal1 out of 16,996 
 
Fujifilm Corporation
 patents
bronzeMedal1 out of 834,601 
Other
 patents

Years Active: 2003-2026

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Areas of Expertise:
Insulated Gate Turn-Off Device
MOS-Gated Devices
Power Devices
Thyristor
Cell Layouts
Epitaxial Layer
Carrier Injection
Trench-Gated
Voltage Control
Current Flow
Turn-Off Characteristics
Base-Width-Determined
22 patents (USPTO):Explore Patents
1. 12568666 - Insulated gate turn-off device with short channel PMOS transistor (2026-03-03),
2. 11393901 - Cell layouts for MOS-gated devices for improved forward voltage (2022-07-19),
3. 11145717 - Cellular insulated gate power device with edge design to prevent failure near edge (2021-10-12),
4. 10797131 - Enhancements to cell layout and fabrication techniques for MOS-gated devices (2020-10-06),
5. 10777670 - Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base formed using epitaxial layer (2020-09-15),
6. 10256331 - Insulated gate turn-off device having low capacitance and low saturation current (2019-04-09),
7. 10224404 - Insulated gate turn-off device with hole injector for faster turn off (2019-03-05),
8. 10181509 - Insulated gate power devices with reduced carrier injection in termination area (2019-01-15),
9. RE47072 - Insulated gate turn-off device with turn-off transistor (2018-10-01),
10. 9935188 - Insulated gate turn-off device with turn-off Schottky-Barrier MOSFET (2018-04-03),
11. 9806181 - Insulated gate power device using a MOSFET for turning off (2017-10-31),
12. 9806152 - Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base (2017-10-31),
13. 9391184 - Insulated gate turn-off device with turn-off transistor (2016-07-12),
14. 9306048 - Dual depth trench-gated mos-controlled thyristor with well-defined turn-on characteristics (2016-04-05),
15. 9082648 - Vertical insulated-gate turn-off device having a planar gate (2015-07-14),

Title: The Innovative Mind of Hidenori Akiyama

Introduction: Hidenori Akiyama, a distinguished inventor hailing from Miyagi, Japan, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Akiyama's recent patents showcase his expertise in developing cutting-edge solutions for various industries, solidifying his position as a pioneer in the world of invention.

Career Highlights: Throughout his illustrious career, Akiyama has consistently pushed the boundaries of what is possible, with a keen focus on creating inventions that have a lasting impact on society.

Collaborations: Akiyama has collaborated with leading research institutions, universities, and companies to bring his visionary ideas to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Hidenori Akiyama's relentless pursuit of innovation and his passion for creating transformative inventions have established him as a trailblazer in the world of technology, inspiring future generations of inventors to think beyond the conventional.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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