The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Mar. 02, 2018
Pakal Technologies, Llc, San Francisco, CA (US);
Hidenori Akiyama, Miyagi, JP;
Richard A. Blanchard, Los Altos, CA (US);
Woytek Tworzydlo, Austin, TX (US);
Vladimir Rodov, Seattle, WA (US);
Pakal Technologies, Inc., San Francisco, CA (US);
Abstract
An insulated gate turn-off (IGTO) device, formed as a die, has a layered structure including a P+ layer (e.g., a substrate), an N− epi layer, a P-well, vertical insulated gates formed in the P-well, and N+ regions between at least some of the gates, so that vertical NPN and PNP transistors are formed. A source/emitter electrode is on top, and a drain/cathode electrode is on the bottom of the substrate. The device is formed of a matrix of cells. To turn the device on, a positive voltage is applied to the gates, referenced to the source/emitter electrode. Some of the cells are passive, having gates that are either not connected to the active gates or having gates that are shorted to their associated N+ regions, to customize the input capacitance and lower the saturation current. Other techniques are described to form the passive cells.