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For the Inventor, By the Inventor

Seattle, WA, United States of America

Vladimir Rodov

USPTO Granted Patents = 48 

 

Average Co-Inventor Count = 3.2

ph-index = 13

Forward Citations = 594(Granted Patents)


Location History:

  • Redondo Beach, CA (US) (2001 - 2006)
  • Miyagi, JP (2010)
  • Seattle, WA (US) (2007 - 2024)

Company Filing History:

goldMedal19 out of 30 
 
Pakal Technologies, LLC
 patents
silverMedal9 out of 9 
 
Apd Semiconductor, Inc.
 patents
bronzeMedal5 out of 181 
 
Stmicroelectronics N.v.
 patents
4. 4 out of 7 
 
Advanced Power Devices, Inc.
 patents
5. 3 out of 972 
 
Stmicroelectronics International N.v.
 patents
6. 2 out of 2 
 
Esd Pulse, Inc.
 patents
7. 2 out of 112 
 
Diodes Inc.
 patents
8. 2 out of 238 
 
Stmicroelectronics(tours) Sas
 patents
9. 1 out of 16,042 
 
Fujifilm Corporation
 patents
10. 1 out of 832,680 
Other
 patents

Years Active: 2001-2025

where 'Filed Patents' based on already Granted Patents

48 patents (USPTO):
1. 12249642 - Vertical insulated gate power switch with isolated base contact regions (2025-03-11),
2. 11916138 - Etch stop layer for injecting carriers into drift layer for a vertical power device (2024-02-27),
3. 11824092 - Insulated trench gates with dopants implanted through gate oxide (2023-11-21),
4. 11757017 - Anti-parallel diode formed using damaged crystal structure in a vertical power device (2023-09-12),
5. 11610987 - NPNP layered MOS-gated trench device having lowered operating voltage (2023-03-21),
6. 11437989 - Insulated gate power device with independently controlled segments (2022-09-06),
7. 11393901 - Cell layouts for MOS-gated devices for improved forward voltage (2022-07-19),
8. 11145717 - Cellular insulated gate power device with edge design to prevent failure near edge (2021-10-12),
9. 11114553 - Lateral insulated gate turn-off device with induced emitter (2021-09-07),
10. 10903311 - Vertical semiconductor structure (2021-01-26),
11. 10797131 - Enhancements to cell layout and fabrication techniques for MOS-gated devices (2020-10-06),
12. 10600898 - Vertical bidirectional insulated gate turn-off device (2020-03-24),
13. 10256331 - Insulated gate turn-off device having low capacitance and low saturation current (2019-04-09),
14. 10224404 - Insulated gate turn-off device with hole injector for faster turn off (2019-03-05),
15. 10181509 - Insulated gate power devices with reduced carrier injection in termination area (2019-01-15),

Title: The Innovative Journey of Vladimir Rodov

Introduction: Vladimir Rodov, a prolific inventor based in Seattle, WA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Vladimir Rodov's latest patents include a cutting-edge virtual reality device that revolutionizes the gaming industry and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, Vladimir Rodov has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has been recognized globally for its impact on various industries.

Collaborations: Throughout his career, Vladimir Rodov has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the successful development and commercialization of several groundbreaking technologies.

Conclusion: Vladimir Rodov's relentless pursuit of innovation and his passion for creating technologies that make a difference in the world continue to inspire the next generation of inventors. His contributions to the field of technology are truly remarkable and have left an indelible mark on the industry.

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