Company Filing History:
Years Active: 2011-2023
Title: Haiting Li: Innovator in Semiconductor Technology
Introduction
Haiting Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His innovative work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Haiting Li's latest patents include a thin-film bulk acoustic resonator and a semiconductor apparatus comprising the same. This invention presents a thin-film bulk acoustic resonator that includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film located between the two cavities. The design features an overlapped region in the plan views of the cavities, which is a polygon without parallel sides. The continuous piezoelectric film enhances acoustic resonance performance. Another notable patent is the backside processed semiconductor device, which includes a first substrate with a shallow trench isolation, a transistor, and a through silicon via that connects to the first interconnect structure.
Career Highlights
Haiting Li has worked with notable companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation and Ningbo Semiconductor International Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Haiting Li has collaborated with esteemed colleagues such as Herb He Huang and Jiguang Zhu. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Haiting Li is a distinguished inventor whose work in semiconductor technology has led to numerous patents and innovations. His contributions continue to impact the industry positively, showcasing his expertise and dedication to advancing technology.