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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9647085 B1

PDFFull Text
Date of Patent:
May. 09, 2017

Filed:

Oct. 31, 2013

Cmos device with double-sided terminals and method of making the same

Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Herb He Huang, Shanghai, CN;

Haiting Li, Shanghai, CN;

Qiang Zhou, Shanghai, CN;

Assignee:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Attorney:

Kilpatrick Townsend and Stockton LLP

Primary Examiner:

Natalia Gondarenko

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 23/48 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 21/76898 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 23/481 (2013.01); H01L 21/76224 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A transistor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate structure disposed on the first surface and configured to form a channel region, and source and drain regions disposed on opposite sides of the channel region. The device also includes a source terminal and a drain terminal disposed on the second surface. The source and drain terminals are connected to the respective source and drain regions. The transistor device further include a body terminal disposed on the second surface and configured to connect the highest or lowest voltage supply to the semiconductor substrate.

Find Patent Forward Citations

Huang, Herb. (2017). Cmos device with double-sided terminals and method of making the same (U.S. Patent No. 9647085). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9647085

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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