The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Oct. 31, 2013
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 23/48 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 21/76898 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 23/481 (2013.01); H01L 21/76224 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A transistor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate structure disposed on the first surface and configured to form a channel region, and source and drain regions disposed on opposite sides of the channel region. The device also includes a source terminal and a drain terminal disposed on the second surface. The source and drain terminals are connected to the respective source and drain regions. The transistor device further include a body terminal disposed on the second surface and configured to connect the highest or lowest voltage supply to the semiconductor substrate.