The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Jul. 15, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Haiting Li, Shanghai, CN;
Herb He Huang, Shanghai, CN;
Qiang Zhou, Shanghai, CN;
Hongtao Ge, Shanghai, CN;
Abstract
A semiconductor device and method of fabricating the semiconductor device are provided. The semiconductor device includes a first substrate including a front-end device containing a transistor, a radio frequency (RF) device and a first interconnect structure, and a second substrate containing a cavity disposed at a location corresponding to a location of the RF device. The first substrate and the second substrate are bonded together such that the first surface of the first substrate is facing the cavity in the second substrate, and the cavity is over the RF device. Because of the cavity, the distance between the second substrate and the RF device is relatively large so that the second substrate has less impact on the performance of the RF device, thereby improving the performance of the semiconductor device.