The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
May. 03, 2016
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Herb He Huang, Shanghai, CN;
Haiting Li, Shanghai, CN;
Xingcheng Jin, Shanghai, CN;
Xinxue Wang, Shanghai, CN;
Hongbo Zhao, Shanghai, CN;
Fucheng Chen, Shanghai, CN;
Yanghui Xiang, Shanghai, CN;
Abstract
A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The semiconductor device also includes a plurality of transistors on the second semiconductor substrate, a deep trench isolation having a bottom at a surface of the first semiconductor substrate in the second region, the deep trench isolation exposing a sidewall of the second semiconductor substrate and a sidewall of the buried insulating layer, and a dielectric capping layer filling the deep trench isolation and covering the plurality of transistors on the second semiconductor substrate.