Yanghui Xiang

Title: Innovations of Yanghui Xiang in Semiconductor Technology

Introduction

Yanghui Xiang is a prominent inventor based in Shanghai, China, known for his significant contributions to semiconductor technology. With a total of five patents to his name, he has made remarkable advancements in the field, particularly in the area of silicon-on-insulator (SOI) substrates.

Latest Patents

Among his latest patents is the invention titled "Deep trench isolation for RF devices on SOI." This semiconductor device features a silicon-on-insulator substrate that includes a stack of a first semiconductor substrate, a buried insulating layer, and a second semiconductor substrate. The design incorporates a deep trench isolation in a second region, which enhances the performance of the device. Another notable patent is the "Method for forming deep trench isolation for RF devices on SOI." This method outlines the process of creating a semiconductor device with shallow trench isolations and transistors, utilizing a hard mask for precision in the formation of the deep trench isolation.

Career Highlights

Yanghui Xiang is currently employed at Semiconductor Manufacturing International Corporation, where he continues to innovate and develop cutting-edge semiconductor technologies. His work has been instrumental in advancing the capabilities of RF devices, making them more efficient and reliable.

Collaborations

Throughout his career, Yanghui has collaborated with notable colleagues, including Herb He Huang and Haiting Li. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Yanghui Xiang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the development of advanced semiconductor devices, paving the way for future innovations.