Company Filing History:
Years Active: 2016-2018
Title: Innovations by Xingcheng Jin in Semiconductor Technology
Introduction
Xingcheng Jin is a prominent inventor based in Shanghai, China, known for his contributions to semiconductor technology. With a total of two patents to his name, he has made significant advancements in the field of radio frequency (RF) devices on silicon-on-insulator (SOI) substrates.
Latest Patents
Xingcheng Jin's latest patents include "Deep trench isolation for RF devices on SOI" and "Method for forming deep trench isolation for RF devices on SOI." The first patent describes a semiconductor device that features a silicon-on-insulator substrate with a stack of a first semiconductor substrate, a buried insulating layer, and a second semiconductor substrate. This device incorporates a deep trench isolation that enhances the performance of RF devices. The second patent outlines a method for forming this semiconductor device, detailing the process of providing a SOI substrate with shallow trench isolations and transistors, followed by the formation of a hard mask and a capping layer.
Career Highlights
Xingcheng Jin is currently employed at Semiconductor Manufacturing International Corporation, where he continues to innovate in the semiconductor industry. His work focuses on improving the efficiency and effectiveness of RF devices, contributing to advancements in technology that impact various applications.
Collaborations
Xingcheng collaborates with notable colleagues, including Herb He Huang and Haiting Li, who share his commitment to pushing the boundaries of semiconductor technology.
Conclusion
Xingcheng Jin's innovative work in semiconductor technology, particularly in the area of RF devices on SOI substrates, showcases his expertise and dedication to advancing the field. His contributions are significant and continue to influence the industry positively.