Average Co-Inventor Count = 2.5

ph-index = 13

Forward Citations = 1,589(Granted Patents)

Location History:

Wappingers Falls, NY (US) (2001 - 2006)
Boissise-le-Roi, FR (2006 - 2012)

Company Filing History:

8 out of 14,705

Infineon Technologies Ag

patents

5 out of 164,108

International Business Machines Corporation

Altis Semiconductor, Snc

6. 4 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2001-2012

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8178379 - Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit (2012-05-15),

2. 7682841 - Method of forming integrated circuit having a magnetic tunnel junction device (2010-03-23),

3. 7368299 - MTJ patterning using free layer wet etching and lift off techniques (2008-05-06),

4. 7084079 - Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications (2006-08-01),

5. 7075807 - Magnetic memory with static magnetic offset field (2006-07-11),

6. 7001783 - Mask schemes for patterning magnetic tunnel junctions (2006-02-21),

7. 6858441 - MRAM MTJ stack to conductive line alignment method (2005-02-22),

8. 6849465 - Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition (2005-02-01),

9. 6806096 - Integration scheme for avoiding plasma damage in MRAM technology (2004-10-19),

10. 6783999 - Subtractive stud formation for MRAM manufacturing (2004-08-31),

11. 6740539 - Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates (2004-05-25),

12. 6713802 - Magnetic tunnel junction patterning using SiC or SiN (2004-03-30),

13. 6649531 - Process for forming a damascene structure (2003-11-18),

14. 6607984 - Removable inorganic anti-reflection coating process (2003-08-19),

15. 6570256 - Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates (2003-05-27),

Title: The Innovative Journey of Gill Yong Lee: Pioneering Patent Inventor

Introduction:

Gill Yong Lee, a prolific inventor based in Wappingers Falls, NY, has made significant contributions to the field of technology with a total of 17 patents to his name. His groundbreaking work in the development of integrated circuits and memory devices has revolutionized the industry.

Latest Patents:

Lee's latest patents showcase his expertise in cutting-edge technologies, including an integrated circuit with a resistivity changing memory device and a unique method of fabricating integrated circuits. His inventions focus on enhancing memory modules and protecting electrode layers against electromagnetic waves, demonstrating his commitment to innovation in the digital age.

Career Highlights:

Throughout his career, Gill Yong Lee has worked with esteemed companies such as Infineon Technologies AG and International Business Machines Corporation (IBM). His collaborations with these industry giants have helped shape the future of technology and solidified his reputation as a visionary inventor.

Collaborations:

Lee has had the privilege of working alongside distinguished colleagues, including Daniel C Edelstein and Richard Anthony Conti. Together, they have leveraged their collective expertise to push the boundaries of technological innovation and bring groundbreaking ideas to life.

Conclusion:

In conclusion, Gill Yong Lee stands as a prominent figure in the world of patent inventions, with a track record of success and a relentless drive to push the boundaries of what is possible in technology. His contributions have left an indelible mark on the industry, inspiring future generations of inventors to continue pushing the envelope of innovation.

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