The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Jun. 20, 2003
Applicant:
Inventor:
Gill Yong Lee, Wappingers Falls, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of fabricating a magnetic memory cell and an MRAM structure. A thin conductive hard is used to pattern a magnetic stack material layer. Conductive studs are fully landed on the top of the thin conductive hard mask, preventing the magnetic memory cells from being exposed subsequent etchant chemistries. The conductive studs provide a large process window for the upper level wiring trench formation, and also provide etch selectivity during the patterning of the upper level wiring.