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Corbeil-Essonnes, France

Altis Semiconductor

USPTO Granted Patents = 29

% Expired Patents = 58.6

EPO Patents = 8

Forward Citations = 398

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36 inventors (with patents filed for the assignee):

Daniel Braun (10 out of 17 patents)

Richard Ferrant (5 out of 81 patents)

Ulrich Karl Klostermann (3 out of 41 patents)

4. Faiz Dahmani (3 out of 4 patents)

5. Dietmar Gogl (3 out of 27 patents)

6. Rainer Leuschner (2 out of 74 patents)

7. Chanro Park (1 out of 351 patents)

8. Pierre De Person (1 out of 2 patents)

9. Michel Aube (1 out of 2 patents)

10. Raymond Filippi (1 out of 1 patent)

11. Jean-Michel Cioranesco (1 out of 1 patent)

12. Sandra Mege (1 out of 4 patents)

13. Philippe Blanchard (1 out of 5 patents)

14. Olivier Philippe Kellener (1 out of 1 patent)

15. Gérard Dubois (1 out of 2 patents)

Core Competencies:

MRAM

Programmable Memory

Memory Cell

Tamper Detection

Doped Zones

Submicron Fabrication

Retention Test

Fluid Flow Measurement

Spin-Polarized Current

Magnetoresistive Junctions

Power Dissipation

Porous Semiconductor

29 patents: Sort by Forward Citations

1. 9514308 - Tamper detection arrangement for integrated circuits (2016-12-06),

2. 8883654 - Method of treating an oxidized layer of metal nitride (2014-11-11),

3. 8823147 - Semiconductor substrate including doped zones forming P-N junctions (2014-09-02),

4. 8668840 - Solution used in the fabrication of a porous semiconductor material, and a method of fabricating said material (2014-03-11),

5. 8597975 - Method of fabricating a microelectronic device with programmable memory (2013-12-03),

6. 8501533 - Method of etching a programmable memory microelectronic device (2013-08-06),

7. 8501525 - Method of fabrication of programmable memory microelectric device (2013-08-06),

8. 8420481 - Memory cell device and method of manufacture (2013-04-16),

9. 8268664 - Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell (2012-09-18),

10. 7754506 - Method of fabricating submicron suspended objects and application to the mechanical characterization of said objects (2010-07-13),

11. 7715258 - Retention test system and method for resistively switching memory devices (2010-05-11),

12. 7411854 - System and method for controlling constant power dissipation (2008-08-12),

13. 7411815 - Memory write circuit (2008-08-12),

14. 7381574 - Method of forming dual interconnects in manufacturing MRAM cells (2008-06-03),

15. 7334317 - Method of forming magnetoresistive junctions in manufacturing MRAM cells (2008-02-26),

Company Overview

Altis Semiconductor is a leading provider of advanced semiconductor solutions, specializing in the development and manufacturing of innovative technologies for various applications. The company focuses on the design and production of high-performance integrated circuits, catering to sectors such as automotive, telecommunications, and consumer electronics. With a strong emphasis on research and development, Altis Semiconductor is committed to delivering cutting-edge solutions that meet the evolving needs of its global clientele.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

29 Patents

#2 in Corbeil-Essonnes

#743 in France

#22,570 in the World

Corbeil-Essonnes, France

Altis Semiconductor

Forward Citations = 398

36 inventors:

Daniel Braun (10 out of 17 patents)

Richard Ferrant (5 out of 81 patents)

Ulrich Karl Klostermann (3 out of 41 patents)

4. Faiz Dahmani (3 out of 4 patents)

5. Dietmar Gogl (3 out of 27 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Altis Semiconductor. Retrieved from https://idiyas.com/company/altis-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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