The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jun. 06, 2005
Philippe Blanchard, Moigny sur Ecole, FR;
Philippe Blanchard, Moigny sur Ecole, FR;
Infineon Technologies AG, Neubiberg, DE;
Altis Semiconductor, Corbeil Essonnes Cedex, FR;
Abstract
A method of forming a magnetoresistive junction in a process of manufacturing a magnetoresistive memory cell includes providing a semiconductor substrate having at least one via contact layer on a main surface thereof, depositing a layered structure of magnetoresistive junction layers on the via contact layer, depositing an etch stop layer on the layered structure of magnetoresistive junction layers, depositing at least one hard mask layer on the etch stop layer, patterning and etching the hard mask layer to create a hard mask, removing of polymer residuals from the hard mask, etching of the etch stop layer, and etching the layered structure of magnetoresistive junction layers to create the magnetoresistive junction. The etching stops at the etch stop layer.