The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Nov. 30, 2005
Woosik Kim, Boissettes, FR;
Chanro Park, Seine, FR;
Woosik Kim, Boissettes, FR;
Chanro Park, Seine, FR;
Infineon Technologies AG, Neubiberg, DE;
Altis Semiconductor, Corbeil Essonnes Cedex, FR;
Abstract
A method of forming dual interconnects in a magnetoresistive memory cell includes: providing an intermediate product including: a metallization layer including metallic lines; a magnetoresistive junction element conductively connected to a first of the metallic lines by a via through a first non-conductive layer; a metallic hard mask disposed on the magnetoresistive junction element; a second non-conductive layer above the first non-conductive layer in regions over the hard mask and a second of the metallic lines; a third non-conductive layer disposed above the hard mask; and a fourth non-conductive layer disposed on the third non-conductive layer. The method further includes partially opening first and second trenches to uncover the second non-conductive layer above the hard mask and second metallic line, respectively; fully opening the first and second trenches to uncover the hard mask and second metallic line, respectively; and filling the first and second trenches with conductive material.