Location History:
- Wappingers Falls, NY (US) (2004)
- Boissettes, FR (2008)
Company Filing History:
2 out of 14,738 
1 out of 29 Years Active: 2004-2008
Title: Woosik Kim: Innovator in MRAM Technology
Introduction
Woosik Kim is a notable inventor based in Boissettes, France. He has made significant contributions to the field of magnetoresistive random-access memory (MRAM) technology. With a total of 2 patents, his work focuses on innovative methods that enhance the manufacturing processes of MRAM cells.
Latest Patents
One of Woosik Kim's latest patents is titled "Method of forming dual interconnects in manufacturing MRAM cells." This method involves providing an intermediate product that includes a metallization layer with metallic lines and a magnetoresistive junction element. The process ensures that the junction element is conductively connected to the metallic lines through a series of non-conductive layers. The method also includes steps for partially and fully opening trenches to uncover the necessary layers and filling them with conductive material.
Another significant patent is the "Integration scheme for avoiding plasma damage in MRAM technology." This invention describes a method of fabricating a magnetic memory device while protecting the conductive hard mask from damage during plasma processes. A buffer insulating layer is deposited over the hard mask, ensuring the integrity of the device during the etching and patterning stages.
Career Highlights
Woosik Kim has worked with prominent companies in the semiconductor industry, including Infineon Technologies and Altis Semiconductor. His experience in these organizations has allowed him to develop and refine his expertise in MRAM technology.
Collaborations
Throughout his career, Woosik Kim has collaborated with talented individuals such as Gill Yong Lee and Chanro Park. These partnerships have contributed to the advancement of his innovative work in the field.
Conclusion
Woosik Kim's contributions to MRAM technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative methods continue to influence the development of advanced memory devices.