The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Feb. 29, 2012
Applicants:
Michel Aube, Ponthierry, FR;
Pierre DE Person, Corbeil Essonnes, FR;
Inventors:
Michel Aube, Ponthierry, FR;
Pierre De Person, Corbeil Essonnes, FR;
Assignee:
Altis Semiconductor, Corbeil Essonnes, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/321 (2006.01); C23C 14/58 (2006.01); C23C 14/06 (2006.01); H01L 33/40 (2010.01); H01L 29/45 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/321 (2013.01); H01L 33/40 (2013.01); C23C 14/5853 (2013.01); H01L 2933/0016 (2013.01); H01L 29/452 (2013.01); H01L 29/456 (2013.01); H01L 21/7685 (2013.01); C23C 14/0641 (2013.01); C23C 14/5826 (2013.01); H01L 21/76861 (2013.01); Y10S 257/915 (2013.01);
Abstract
The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer () of metal oxide at the surface of a first layer () of nitride of said metal using a plasma of an oxidizing species with an oxidation number that is greater than that of oxygen in order to form a metallic layer () of a compound based on said metal; and reducing the metallic layer () formed in step i) using a plasma of hydrogen and nitrogen to form a second layer () of nitride of said metal.