The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Jul. 23, 2012
Applicants:

Olivier Philippe Kellener, Corbeil Essonnes, FR;

Gérard Dubois, Combs la Ville, FR;

Mehdi Mohamed Kanoun, Janville sur Juine, FR;

Stephen Mcardle, Charlestown, GB;

Inventors:

Olivier Philippe Kellener, Corbeil Essonnes, FR;

Gérard Dubois, Combs la Ville, FR;

Mehdi Mohamed Kanoun, Janville sur Juine, FR;

Stephen McArdle, Charlestown, GB;

Assignee:

Altis Semiconductor, Corbeil Essonnes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/761 (2006.01); H01L 21/8238 (2006.01); H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 21/8238 (2013.01); H01L 21/823878 (2013.01); H01L 21/8249 (2013.01);
Abstract

A semiconductor substrate () has three doped zones (), () and (), forming a P-N junction (), the third zone being located between the first zone and the second zone. The P-N junction of the substrate further has a fourth doped zone () having a first portion (A) in contact with the first zone; and a second portion (B) in contact with the third zone (), said second portion (B) extending in the direction of the second zone (), and not being in contact with the second zone (); where the fourth zone () being doped with the same type of doping as that of the first zone.


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