The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Dec. 16, 2011
Stéphane Cholet, Fontenay Aux Roses, FR;
Stéphane Cholet, Fontenay Aux Roses, FR;
Altis Semiconductor, Corbeil Essonnes, FR;
Abstract
A method of etching a programmable memory microelectronic device () having a substrate covered with at least one of the following layers in succession: a first electrode () based on a first metallic element; a layer () of chalcogenide doped with a second metallic element; a second electrode () based on a third metallic element; a diffusion barrier type electrically-conductive layer (); and a hard mask (); is provided. The method includes etching, using an inert gas plasma, at least the hard mask (), the electrically-conductive layer (), the second electrode () and the chalcogenide layer (), where the etching step is carried out by cathode sputtering at a temperature strictly less than 150° C., preferably at a temperature of at most 120° C., and particularly preferably at a temperature of at most 100° C.