The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jun. 01, 2011
Faiz Dahmani, La Varenne-Saint Hilaire, FR;
Faiz Dahmani, La Varenne-Saint Hilaire, FR;
Altis Semiconductor, Corbeil Essonnes, FR;
Abstract
A method of fabricating a programmable memory microelectronic device includes depositing onto a first electrode an intermediate layer of a material having a chalcogenide; depositing an ionizable metallic layer on the intermediate layer; irradiating with ultraviolet radiation the ionizable metallic layer so that metallic ions from the ionizable metallic layer diffuse into the intermediate layer to form a chalcogenide material containing metallic ions, and depositing a second electrode on the layer of chalcogenide material containing metallic ions obtained in the prior step. The second and third steps are repeated at least n times, where n is an integer greater than or equal to 1. The ionizable metallic layer deposited during the second step has a sufficiently small thickness that the metallic ions may be diffused totally during the irradiation (third) step.