The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jun. 15, 2006
Pierre Vekeman, Boissise le Roi, FR;
Sodonie Lefebvre, Chatenay Malabry, FR;
Thierry Hoc, L'Hay les Roses, FR;
Pascal Deconinck, Dresden, DE;
Pierre Vekeman, Boissise le Roi, FR;
Sodonie Lefebvre, Chatenay Malabry, FR;
Thierry Hoc, L'Hay les Roses, FR;
Pascal Deconinck, Dresden, DE;
Altis Semiconductor, , FR;
Abstract
A method of fabricating submicron objects that includes the following steps: depositing a void layer on a support, depositing a transfer layer on the void layer, producing the objects in the transfer layer, producing a hard mask on a portion of the transfer layer to delimit a region comprising a portion of the objects, and etching the combination formed by the hard mask, the transfer layer and the void layer to eliminate the hard mask and the portion of the transfer layer in the region and to open up the portion of the void layer under the region so that the objects are suspended, the rate of etching the void layer being greater than the rate of etching the transfer layer and the hard mask.