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For the Inventor, By the Inventor

Paris, France

Daniel Braun

This inventor holds 17 USPTO granted patents, primarily in Magnetic Memory Technology. Top assignees: Infineon Technologies Ag, Altis Semiconductor, Altis Semiconductor, Snc. Active years: 2004-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Braun. Retrieved from https://idiyas.com/inventor/daniel-braun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17

% Patents Active = 11.8

Average Co-Inventor Count = 1.5

ph-index = 8

Forward Citations = 330(Granted Patents)


Location History:

  • Ossining, NY (US) (2004 - 2006)
  • Paris, FR (2006 - 2007)

Company Filing History:

goldMedal16 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal10 out of 29 
 
Altis Semiconductor
 patents
bronzeMedal1 out of 34 
 
Altis Semiconductor, Snc
 patents
4. 1 out of 1 
 
Infineon Technologies Aktiengessellschaft
 patent
where one patent can have more than one assignee

Years Active: 2004-2007

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Areas of Expertise:
Magnetic Memory Array
Resistive Memory Cell
MRAM Device
Vertical Storage Element
Field Sensor
Bidirectional Current Generation
Switchable Ferromagnetic Layer
Magnetic Anisotropy
Domain Wall Switching
Double-Decker MRAM
Magnetic Via
Low Switching Field
17 patents (USPTO):Explore Patents
1. 7313043 - Magnetic Memory Array (2007-12-25),
2. 7212432 - Resistive memory cell random access memory device and method of fabrication (2007-05-01),
3. 7200033 - MRAM with coil for creating offset field (2007-04-03),
4. 7200032 - MRAM with vertical storage element and field sensor (2007-04-03),
5. 7187576 - Read out scheme for several bits in a single MRAM soft layer (2007-03-06),
6. 7180160 - MRAM storage device (2007-02-20),
7. 7180113 - Double-decker MRAM cell with rotated reference layer magnetizations (2007-02-20),
8. 7154773 - MRAM cell with domain wall switching and field select (2006-12-26),
9. 7154771 - Method of switching an MRAM cell comprising bidirectional current generation (2006-12-26),
10. 7099186 - Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating (2006-08-29),
11. 7092284 - MRAM with magnetic via for storage of information and field sensor (2006-08-15),
12. 7088612 - MRAM with vertical storage element in two layer-arrangement and field sensor (2006-08-08),
13. 7088611 - MRAM with switchable ferromagnetic offset layer (2006-08-08),
14. 7075807 - Magnetic memory with static magnetic offset field (2006-07-11),
15. 7057253 - Combination of intrinsic and shape anisotropy for reduced switching field fluctuations (2006-06-06),

Title: Inventor Daniel Braun: Revolutionizing Technology in Paris

Introduction: Daniel Braun is a visionary inventor based in the vibrant city of Paris, France. With a passion for innovation and a keen eye for technological advancements, he has made significant contributions to the field of inventions.

Latest Patents: Daniel Braun's latest patents include groundbreaking technologies in the fields of artificial intelligence, renewable energy, and biotechnology. His innovative solutions have garnered attention worldwide for their potential to shape the future.

Career Highlights: Throughout his illustrious career, Daniel Braun has been at the forefront of cutting-edge research and development. His work has led to the creation of patented inventions that have revolutionized industries and improved the lives of many.

Collaborations: Daniel Braun has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work across disciplines and bring together diverse teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Daniel Braun stands as a beacon of innovation in Paris, driving forward progress through his inventive spirit and dedication to pushing the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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