The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7099186 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 29, 2006

Filed:

Feb. 10, 2005
Applicant:

Daniel Braun, Paris, FR;

Inventor:

Daniel Braun, Paris, FR;

Assignees:

Infineon Technologies AG, Munich, DE;

Altis Semiconductor, Corbeil Essonnes Cedex, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes free and fixed magnetic regions made of magnetic material separated by a tunneling barrier layer made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer made of the same antiferromagnetic material such that in applying an external magnetic field fixed magnetizations are brought into a scissored configuration.


Find Patent Forward Citations

Braun, Daniel. (2006). Double-decker mram cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating (U.S. Patent No. 7099186). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7099186

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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