The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Feb. 10, 2005
Applicant:
Daniel Braun, Paris, FR;
Inventor:
Daniel Braun, Paris, FR;
Assignees:
Infineon Technologies AG, Munich, DE;
Altis Semiconductor, Corbeil Essonnes Cedex, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/94 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes first and second free and fixed magnetic regions made of magnetic material separated by a first and second tunneling barrier layers made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer. The first and second fixed magnetizations are oriented in a same magnetic anisotropy axis and are inclined under an angle relative to at least one of said first and second free magnetizations.