The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Aug. 18, 2004
Rainer Leuschner, Samoreau, FR;
Daniel Braun, Paris, FR;
Gill Yong Lee, Boissise-le-Roi, FR;
Ulrich Klostermann, Fontainebleau, FR;
Rainer Leuschner, Samoreau, FR;
Daniel Braun, Paris, FR;
Gill Yong Lee, Boissise-le-Roi, FR;
Ulrich Klostermann, Fontainebleau, FR;
Infineon Technologies AG, Munich, DE;
Altis Semiconductor, Corbell Essonnes Cedex, FR;
Abstract
A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetization of the first magnetic layer is magnetically coupled to a first current line and a second current line for switching the free magnetization, and a mechanism for applying a static magnetic offset field in the direction of at least one of the first and second current lines.