The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Feb. 09, 2005
Daniel Braun, Paris, FR;
Daniel Braun, Paris, FR;
Infineon Technologies AG, Munich, DE;
Altis Semiconductor, Corbeil Besonnes Cedex, FR;
Abstract
The present invention relates to a method of switching a magnetoresistive memory (MRAM) cell including the following steps: providing an MRAM cell having a magnetic tunnel junction including first and second magnetic regions; the first magnetic region exhibiting a fixed magnetization, the second magnetic region exhibiting a free magnetization which is free to be switched between the same and opposite directions with respect to the fixed magnetization of the first magnetic region; the free magnetization being magnetically coupled to magnetic fields generated by first and second currents made to flow through first and second current lines, respectively; switching of the free magnetization by currents made to flow through the first and second current lines; and inverting of flowing directions of first and/or second currents for the switching of the free magnetization such that a respective time-averaged mean value of the first and/or second currents becomes essentially equal to zero.