The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Nov. 26, 2001
William J. Cote, Poughkeepsie, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Prakash Chimanlal Dev, Plano, TX (US);
Daniel C. Edelstein, White Plains, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Gill Yong Lee, Wappingers Falls, NY (US);
Arpan P. Mahorowala, Bronxville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for forming a damascene structure includes depositing a bilayer comprising a first dielectric layer and a second dielectric layer onto a substrate, wherein the first layer has a dielectric constant higher than the second layer, and wherein the second layer is selected from a low k dielectric material comprising Si, C, O and H. The multi-step damascene structure is patterned into the dielectric bilayer using highly selective anisotropic reactive ion etching. Photoresist, polymers and post etch residues are removed from the substrate using a plasma ashing process without damaging the underlying dielectric layers.