The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7368299 B1

PDF
Full Text
Expired
Date of Patent:
May. 06, 2008

Filed:

Jul. 14, 2004
Applicants:

Gill Yong Lee, Boissise-le-Roi, FR;

Eugene O'sullivan, Nyack, NY (US);

Inventors:

Gill Yong Lee, Boissise-le-Roi, FR;

Eugene O'Sullivan, Nyack, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8246 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices, wherein the second magnetic layer or free layer of a magnetic stack may be patterned using a wet etch technique. A cap layer is formed over the free layer after the free layer is patterned. The cap layer is formed using lift-off techniques. To form the cap layer, resist layers are deposited and patterned, and material layers are deposited over the resist layers. Portions of the material layers are removed when the resist is stripped.


Find Patent Forward Citations

Lee, Gill. (2008). Mtj patterning using free layer wet etching and lift off techniques (U.S. Patent No. 7368299). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7368299

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