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For the Inventor, By the Inventor

Suwon, South Korea

Geum-Jong Bae

USPTO Granted Patents = 27

Average Co-Inventor Count = 4.9

ph-index = 12

Forward Citations = 453(Granted Patents)


Location History:

  • Kyunggi-do, KR (2003 - 2005)
  • Yongin-shi, KR (2005 - 2006)
  • Suwon, KR (2003 - 2007)
  • Suwon-shi, KR (2007)
  • Gyeonggi-do, KR (2006 - 2008)
  • Incheon-si, KR (2007 - 2008)

Company Filing History:

goldMedal27 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2008

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27 patents (USPTO):Explore Patents
1. 7394127 - Non-volatile memory device having a charge storage oxide layer and operation thereof (2008-07-01),
2. 7345925 - Soft erasing methods for nonvolatile memory cells (2008-03-18),
3. 7250655 - MOS transistor having a T-shaped gate electrode (2007-07-31),
4. 7184316 - Non-volatile memory cell array having common drain lines and method of operating the same (2007-02-27),
5. 7183172 - Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby (2007-02-27),
6. 7179709 - Method of fabricating non-volatile memory device having local SONOS gate structure (2007-02-20),
7. 7112849 - Method of preventing semiconductor layers from bending and semiconductor device formed thereby (2006-09-26),
8. 7060563 - Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same (2006-06-13),
9. 7045424 - Method of fabricating local SONOS type gate structure and method of fabricating nonvolatile memory cell having the same (2006-05-16),
10. 6917085 - Semiconductor transistor using L-shaped spacer (2005-07-12),
11. 6881650 - Method for forming SOI substrate (2005-04-19),
12. 6881645 - Method of preventing semiconductor layers from bending and semiconductor device formed thereby (2005-04-19),
13. 6881621 - Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same (2005-04-19),
14. 6878580 - Semiconductor device having gate with negative slope and method for manufacturing the same (2005-04-12),
15. 6815764 - Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same (2004-11-09),

Title: Innovator Spotlight: Geum-Jong Bae

Introduction

Geum-Jong Bae is a prominent inventor based in Suwon, South Korea, known for his substantial contributions to the field of non-volatile memory technology. With a remarkable portfolio of 27 patents, Bae has played a critical role in advancing memory device architecture and operations.

Latest Patents

Bae's latest innovations include a non-volatile memory device featuring a charge storage oxide layer, which enhances the device's performance and reliability. This patent outlines a device structure that includes a pair of source/drain regions in a semiconductor substrate, with a charge storage oxide layer positioned between them. The innovation allows for improved program and erase operations by utilizing halo implantation regions, showcasing Bae's expertise in microelectronics. Additionally, he has developed soft erasure methods for nonvolatile memory cells that strategically apply voltages to achieve more efficient data management.

Career Highlights

Throughout his career at Samsung Electronics Co., Ltd., Geum-Jong Bae has made significant strides in the realm of semiconductor technology. His inventive spirit is reflected in his extensive patent portfolio, which includes groundbreaking approaches to integrating memory functionalities in electronic devices. His work has greatly contributed to the advancement of memory storage solutions, meeting the growing demands for faster, more efficient technology.

Collaborations

Bae has collaborated with esteemed colleagues, including Hwa-sung Rhee and Sang-Su Kim, who have shared in the pursuit of innovative solutions within the field of non-volatile memory. Their combined expertise has facilitated the development of advanced technologies that continue to impact the industry.

Conclusion

Geum-Jong Bae stands as a leading inventor in the technology sector, with a proven track record of innovations that push the boundaries of memory device capabilities. As he continues to develop and refine non-volatile memory technologies, Bae's contributions promise to shape the future of electronic devices, making lasting impacts on both users and the industry at large.

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