The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Mar. 26, 2003
Jung-il Lee, Gimcheon-shi, KR;
Geum-jong Bae, Suwon-shi, KR;
Ki-chul Kim, Suwon-shi, JP;
Hwa-sung Rhee, Seoul, KR;
Sang-su Kim, Suwon-shi, KR;
Jung-Il Lee, Gimcheon-shi, KR;
Geum-Jong Bae, Suwon-shi, KR;
Ki-Chul Kim, Suwon-shi, JP;
Hwa-Sung Rhee, Seoul, KR;
Sang-Su Kim, Suwon-shi, KR;
Abstract
A method of forming an SOI semiconductor substrate and the SOI semiconductor substrate formed thereby, is provided. The method includes forming sequentially buried oxide, diffusion barrier and SOI layers on a semiconductor substrate. The diffusion barrier layer is formed by an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer. The diffusion barrier layer serves to prevent impurities implanted into the SOI layer from being diffused into the buried oxide layer or the semiconductor substrate.