The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2005
Filed:
Dec. 08, 2003
Geum-jong Bae, Kyunggi-do, KR;
Nae-in Lee, Seoul, KR;
Hwa-sung Rhee, Seoul, KR;
Young-gun Ko, Seoul, KR;
Tae-hee Choe, Seoul, KR;
Sang-su Kim, Yongin-shi, KR;
Geum-Jong Bae, Kyunggi-do, KR;
Nae-In Lee, Seoul, KR;
Hwa-Sung Rhee, Seoul, KR;
Young-Gun Ko, Seoul, KR;
Tae-Hee Choe, Seoul, KR;
Sang-Su Kim, Yongin-shi, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
The present invention provides a semiconductor transistor using an L-shaped spacer. The semiconductor transistor includes a gate pattern formed on a semiconductor substrate and an L-shaped third spacer formed beside the gate pattern and having a horizontal protruding portion. An L-shaped fourth spacer is formed between the third spacer and the gate pattern, and between the third spacer and the substrate. A high-concentration junction area is positioned in the substrate beyond the third spacer, and a low-concentration junction area is positioned under the horizontal protruding portion of the third spacer. A medium-concentration junction area is positioned between the high- and low-concentration junction areas.