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Seoul, South Korea

Young-Gun Ko

This inventor holds 20 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young-Gun Ko. Retrieved from https://idiyas.com/inventor/young-gun-ko

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 281(Granted Patents)


Location History:

  • Songpa-ku, KR (2002 - 2004)
  • Sungpa-ku, KR (2003 - 2004)
  • Seoul, KR (2002 - 2005)
  • Fishkill, NY (US) (2009)
  • Seongnam-si, KR (2006 - 2018)

Company Filing History:

goldMedal20 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2018

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Areas of Expertise:
Semiconductor Devices
Insulating Materials
Strain-Inducing Pattern
Silicide Layer
Floating Body Effects
L-Shaped Spacer
Silicon On Insulator
Integrated Circuits
Electrically Programmable Fuses
Low Power Applications
Dummy Gates
Fabrication Methods
20 patents (USPTO):Explore Patents
1. 10141312 - Semiconductor devices including insulating materials in fins (2018-11-27),
2. 9240481 - Semiconductor device having embedded strain-inducing pattern (2016-01-19),
3. 9209177 - Semiconductor devices including gates and dummy gates of different materials (2015-12-08),
4. 8962435 - Method of forming semiconductor device having embedded strain-inducing pattern (2015-02-24),
5. 8884298 - Semiconductor device having embedded strain-inducing pattern and method of forming the same (2014-11-11),
6. 7576407 - Devices and methods for constructing electrically programmable integrated fuses for low power applications (2009-08-18),
7. 7338874 - Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the same (2008-03-04),
8. 7098514 - Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the same (2006-08-29),
9. 6917085 - Semiconductor transistor using L-shaped spacer (2005-07-12),
10. 6858907 - Method of fabricating semiconductor device having notched gate (2005-02-22),
11. 6844223 - Semiconductor device having silicon on insulator and fabricating method therefor (2005-01-18),
12. 6770540 - Method of fabricating semiconductor device having L-shaped spacer (2004-08-03),
13. 6706569 - SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same (2004-03-16),
14. 6703280 - SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same (2004-03-09),
15. 6693325 - Semiconductor device having silicon on insulator and fabricating method therefor (2004-02-17),

Title: Young-Gun Ko: Pioneering Inventor from Seoul

Introduction: Young-Gun Ko is a distinguished inventor hailing from Seoul, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Young-Gun Ko holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Young-Gun Ko has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible in the world of innovation.

Collaborations: Throughout his career, Young-Gun Ko has collaborated with top scientists, engineers, and inventors from around the globe, fostering a culture of creativity and excellence in all his projects.

Conclusion: Young-Gun Ko's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of industries worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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